BYG22 vishay semiconductors 1 (5) rev. 5, 27-sep-00 www.vishay.com document number 86011 ultra fast silicon mesa smd rectifier features controlled avalanche characteristic glass passivated junction low reverse current low forward voltage soft recovery characteristic very fast reverse recovery time good switching characteristics wave and reflow solderable applications surface mounting super fast rectifier freewheeling diodes in smps and converters snubber diodes 15 811 absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit reverse voltage BYG22a v 50 r everse vo lt age= re p etitive p eak reverse voltage BYG22b v r = v rrm 100 v re etitive eak reverse voltage BYG22d v rrm 200 peak forward surge current t p =10ms, half sinewave i fsm 35 a average forward current i fav 2 a junction and storage temperature range t j =t stg 55...+150 c pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r =1a, t j =25 c e r 20 mj maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction lead t l =const. r thjl 25 mounted on epoxyglass hard tissue 150 k/w junction ambient mounted on epoxyglass hard tissue, 50mm 2 35 m cu r thja 125 k/w mounted on aloxidceramic (al 2 o 3 ), 50mm 2 35 m cu thja 100
BYG22 vishay semiconductors 2 (5) rev. 5, 27-sep-00 www.vishay.com document number 86011 electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =1a v f 1 v forward voltage i f =2a v f 1.1 v reverse current v r =v rrm i r 1 a reverse current v r =v rrm , t j =100 c i r 10 a reverse recovery time i f =0.5a, i r =1a, i r =0.25a t rr 25 ns characteristics (t j = 25 c unless otherwise specified) i forward current ( a) 0.001 0.010 0.100 1.000 10.000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v f forward voltage ( v ) 16448 f t j =25 ? ? ? ?? ? ????? ? ??????? ?????? ?? ??????? ??????? ? ?? ?? ?? ?? ? ? M ? ? ?? ?? ?M ? ?? ?????? ????????? ? ? ? ?M ? ??????? ??????? ?????? ? ? ? ??? ? ? ?? ???? ???????? ???? ?k? ???? 125k/w r thja 150k/w figure 2. max. average forward current vs. ambient temperature 1 10 100 25 50 75 100 125 150 t j junction temperature ( ? ? ?M? ? ? ?? ? ?????? ?????? ? ? ? ????? ? ?????? ?????? ?? ??????? ????????? ? ? ? ? ? ? ? ? ? ?? ?? ? ? ??????? ????????? ? ? ? ?M? ? ? ?? ?????? ???? ?????????? ? ? ? ???? ???? ???? ???? ????? ?? ?????? ???? ?????????? ?? ??????? ?????????
BYG22 vishay semiconductors 3 (5) rev. 5, 27-sep-00 www.vishay.com document number 86011 0 10 20 30 40 50 60 70 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 16452 c diode capacitance ( pf ) d f=1mhz figure 5. diode capacitance vs. reverse voltage 0 0.2 0.4 0.6 0.8 0 20 40 60 80 140 t reverse recovery time ( ns ) rr i f forward current ( a ) 1.0 94 9353 100 120 t amb = 125 ? ? ?? ? ??? ? ? ? ? ? ? ? ? ????? M ?? ?????? ?????? ??? ?? ??????? ?????? ? ? ? ? M ?????? ?????? ?????? ? ?? ? ?? ? ?? ? ? ?M ? ? ? ??????? ?????? ? ? ? ?? ? ? ?? ?? ? ? ?? ? ??? ? ? ? ? ? ? ? ? ????? ? ?? ?????? ?????? ?????? ?? ??????? ?????? ? ? ? ? ? ?????? ????????? ??? ???? ???? ?k?? ?? ? ???? ?????? ? ? ? ? ??? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? ? ?? ? ?? ? ?? ? ??? ? ??? ?????? ???? ??k? ?? ????? ? ?????? ??????
BYG22 vishay semiconductors 4 (5) rev. 5, 27-sep-00 www.vishay.com document number 86011 dimensions in mm 14275
BYG22 vishay semiconductors 5 (5) rev. 5, 27-sep-00 www.vishay.com document number 86011 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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